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IRFP4332PBF Datasheet

Part Number IRFP4332PBF
Manufacturers International Rectifier
Logo International Rectifier
Description PDP SWITCH
Datasheet IRFP4332PBF DatasheetIRFP4332PBF Datasheet (PDF)

PDP SWITCH PD - 97100B IRFP4332PbF Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low QG for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l175°C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Capa.

  IRFP4332PBF   IRFP4332PBF






PDP SWITCH

PDP SWITCH PD - 97100B IRFP4332PbF Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low QG for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l175°C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability Key Parameters VDS min VDS (Avalanche) typ. RDS(ON) typ. @ 10V TJ max 250 300 29 175 V V m: °C DD G S S D G TO-247AC GDS Description Gate Drain Source This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET ar.


2007-03-14 : STV0288    1SS400C2    1SS400CS    2N60    A3988    A8286    A8430    A8431    A8436    A8438   


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