isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFP450
FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source ...
isc N-Channel
MOSFET Transistor
INCHANGE Semiconductor
IRFP450
FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source
Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.4Ω(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source
Voltage
VGS
Gate-Source
Voltage-Continuous
ID
Drain Current-Continuous
IDM
Drain Current-Single Pluse
PD
Total Dissipation @TC=25℃
TJ
Max. Operating Junction Temperature
Tstg
Storage Temperature
VALUE UNIT
500
V
±20
V
14
A
56
A
180
W
-55~150 ℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
Rth j-a Thermal Resistance, Junction to Ambient
MAX 0.7 30
UNIT ℃/W ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel
MOSFET Transistor
INCHANGE Semiconductor
IRFP450
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS
Drain-Source Breakdown
Voltage
VGS(th)
Gate Threshold
Voltage
CONDITIONS VGS= 0; ID= 0.25mA VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 8.4A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate
Voltage Drain Current VDS= 500V; VGS= 0
VSD
Forward On-
Voltage
trr
Reverse Recovery Time
...