MOSFET. IRFR3412PBF Datasheet

IRFR3412PBF Datasheet PDF

Part IRFR3412PBF
Description SMPS MOSFET
Feature www.DataSheet4U.com PD - 95498A SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor.
Manufacture International Rectifier
Datasheet
Download IRFR3412PBF Datasheet

www.DataSheet4U.com PD - 95498A SMPS MOSFET Applications l IRFR3412PBF Datasheet





IRFR3412PBF
www.DataSheet4U.com
PD - 95498A
IRFR3412PbF
SMPS MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Motor Drive
l Bridge Converters
l All Zero Voltage Switching
l Lead-Free
VDSS
100V
IRFU3412PbF
HEXFET® Power MOSFET
RDS(on) max
0.025
ID
48A†
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Enhanced Body Diode dv/dt Capability
D-Pak
IRFR3412
I-Pak
IRFU3412
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 second
Mounting torqe, 6-32 or M3 screw
Max.
48†
34†
190
140
0.95
± 20
6.4
-55 to + 175
300(1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD
trr
Qrr
IRRM
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Forward Turn-On Time
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Min. Typ. Max. Units
Conditions
––– ––– 48†
A
MOSFET symbol
showing the
integral reverse
––– ––– 190
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 29A, VGS = 0V „
––– 68 100 ns TJ = 125°C, IF = 29A
––– 160 240 nC di/dt = 100A/µs „
––– 4.5 6.8 A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
1
12/03/04



IRFR3412PBF
IRFR/U3412PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS Gate-to-Source Reverse Leakage
100
–––
–––
3.5
–––
–––
–––
–––
––– –––
0.10 –––
––– 0.025
––– 5.5
––– 1.0
––– 250
––– 100
––– -100
V
V/°C
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA †
VGS = 10V, ID = 29A „
VDS = VGS, ID = 250µA
VDS = 95V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs Forward Transconductance
25 ––– ––– S VDS = 50V, ID = 29A
Qg Total Gate Charge
––– 59 89
ID = 29A
Qgs Gate-to-Source Charge
––– 21 32 nC VDS = 50V
Qgd Gate-to-Drain ("Miller") Charge
––– 17 26
VGS = 10V, „
td(on)
Turn-On Delay Time
––– 19 –––
VDD = 50V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 68 ––– ns ID = 29A
––– 44 –––
RG = 6.8
tf Fall Time
––– 37 –––
VGS = 10V „
Ciss Input Capacitance
––– 3430 –––
VGS = 0V
Coss Output Capacitance
––– 270 –––
VDS = 25V
Crss Reverse Transfer Capacitance
––– 150 ––– pF ƒ = 1.0MHz
Coss Output Capacitance
––– 1040 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance
––– 170 –––
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance
––– 270 –––
VGS = 0V, VDS = 0V to 80V …
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy‚
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
160
29
14
Units
mJ
A
mJ
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
––– 1.05
––– 50 °C/W
––– 110
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
‚ Starting TJ = 25°C, L = 0.38mH, RG = 25,
IAS = 29A, (See Figure 12a)
ƒ ISD 29A, di/dt 420A/µs, VDD V(BR)DSS,
TJ 150°C
„ Pulse width 300µs; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
†Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
2
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