| Part Number | IRFU214B |
| Manufacturer | Fairchild Semiconductor |
| Title | 250V N-Channel MOSFET |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced... |
| Features |
• • • • • • 2.2A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ● ◀ ▲ ● ● G S D-PAK IRFR Series I-PAK G D S IRFU Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM V... |
| Datasheet | IRFU214B pdf datasheet |
| Part Number | IRFU214PBF |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | PD- 95384A IRFR214PbF IRFU214PbF Lead-Free www..com www.irf.com 1 12/3/04 IRFR/U214PbF www..com 2 www.irf.com I. |
| Features |
irf.com
IRFR/U214PbF
I-Pak (TO-251AA) Package Outline(Dimensions are shown in millimeters (inches))
www.DataSheet4U.com
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: T HIS IS AN IRF U120 WIT H ASSEMB LY LOT CODE 5678 ASS EMBLED ON WW 19, 1999 IN T HE ASS EMBLY LINE "A" Note: "P" in assembly . |
| Datasheet | IRFU214PBF pdf datasheet |
| Part Number | IRFU214BA3HD |
| Manufacturer | Huajing Microelectronics |
| Title | Silicon N-Channel Power MOSFET |
| Description | IRFU214B A3HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, i. |
| Features |
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data: 8.0nC)
l Low Reverse transfer capacitances(Typical: 8pF)
l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Para. |
| Datasheet | IRFU214BA3HD pdf datasheet |
| Part Number | IRFU214A |
| Manufacturer | Samsung |
| Title | Power MOSFET |
| Description | )($785(6 Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Q. |
| Features |
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| Datasheet | IRFU214A pdf datasheet |
| Part Number | IRFU214 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | iscN-Channel MOSFET Transistor IRFU214 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤2.0Ω @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (V. |
| Features |
·Low drain-source on-resistance: RDS(ON) ≤2.0Ω @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃. |
| Datasheet | IRFU214 pdf datasheet |
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