PD -96207A
IRFR4620PbF IRFU4620PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible P...
PD -96207A
IRFR4620PbF IRFU4620PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
G
Benefits l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness l Fully Characterized Capacitance and Avalanche
SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free
HEXFET® Power
MOSFET
D VDSS RDS(on) typ.
max.
200V
64m: 78m:
S ID
24A
DD
S G
DPak IRFR4620PbF
S D G
IPAK IRFU4620PbF
G Gate
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C IDM
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS dv/dt
Gate-to-Source
Voltage
ePeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited) IAR EAR
dSingle Pulse Avalanche Energy cAvalanche Current cRepetitive Avalanche Energy
Thermal Resistance
Symbol RθJC RθJA
Parameter
jJunction-to-Case iJunction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet.
Notes through are on page 11 www.irf.com
D Drain
Max. 24 17 100 144 0.96 ± 20 54
-55 to + 175
300
113 See Fig. 14, 15, 22a, 22b,
Typ. ––– ––– –––
Max. 1.045
50 110
S Source
Units A...