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IRFW644B MOSFET Datasheet PDFN-Channel MOSFET N-Channel MOSFET |
| Part Number | IRFW644B |
|---|---|
| Description | N-Channel MOSFET |
| Feature | IRFW644B / IRFI644B
November 2001
IRFW644B / IRFI644B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converter and switch mode power supplies.
Features
• • • • • • 14A, 250V, RDS(on) = 0.28Ω @VGS = 10 V Lo. |
| Manufacture | Fairchild Semiconductor |
| Datasheet |
| Part Number | IRFW644B |
|---|---|
| Description | N-Channel MOSFET |
| Feature | IRFW644B / IRFI644B
November 2001
IRFW644B / IRFI644B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converter and switch mode power supplies.
Features
• • • • • • 14A, 250V, RDS(on) = 0.28Ω @VGS = 10 V Lo. |
| Manufacture | Fairchild Semiconductor |
| Datasheet |
| Part Number | IRFW644B |
|---|---|
| Description | N-Channel MOSFET |
| Feature | IRFW644B / IRFI644B
November 2001
IRFW644B / IRFI644B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converter and switch mode power supplies. Features • • • • • • 14A, 250V, RDS(on) = 0. 28Ω @VGS = 10 V Lo. |
| Manufacture | Fairchild Semiconductor |
| Datasheet |
| Part Number | IRFW644B |
|---|---|
| Description | N-Channel MOSFET |
| Feature | IRFW644B / IRFI644B
November 2001
IRFW644B / IRFI644B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converter and switch mode power supplies. Features • • • • • • 14A, 250V, RDS(on) = 0. 28Ω @VGS = 10 V Lo. |
| Manufacture | Fairchild Semiconductor |
| Datasheet |
|
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