PD - 95613
IRG4BC15UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
UltraFast: Opt...
PD - 95613
IRG4BC15UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching IGBT Co-packaged with ultra-soft-recovery antiparallel diode Industry standard TO-220AB package Lead-Free
C
UltraFast CoPack IGBT
VCES = 600V
G E
VCE(on) typ. = 2.02V
@VGE = 15V, IC = 7.8A
Benefits
Best Value for Appliance and Industrial Applications High noise immune "Positive Only" gate driveNegative bias gate drive not necessary For Low EMI designs- requires little or no snubbing Single Package switch for bridge circuit applications Compatible with high
voltage Gate Driver IC's Allows simpler gate drive
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n-channel
TO-220AB
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter
Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter
Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
Max.
600 14 7.8 42 42 4.0 16 ± 20 49 19 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1 Nm)
Units
V
A
V W °C
Thermal Resistance
Parameter
RθJC RθJC RθCS RθJA Wt Junction-to-Ca...