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IRG4BC20U transistor Datasheet PDFbipolar transistor |
| Part Number | IRG4BC20U |
|---|---|
| Description | Insulated gate bipolar transistor |
| Feature | PD - 91448D IRG4BC20U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.5A n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-s. |
| Manufacture | IRF |
| Datasheet |
| Part Number | IRG4BC20UPbF |
|---|---|
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Feature | PD - 95445A IRG4BC20UPbF INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-220AB package Lead-Free C G E n-channel Benefits Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs VCES = . |
| Manufacture | International Rectifier |
| Datasheet |
| Part Number | IRG4BC20UD-SPBF |
|---|---|
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Feature | PD- 95565A IRG4BC20UD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard D2Pak package • Lead-Free C G E N-channel VCES = 600V VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.5A Benefits • Genera. |
| Manufacture | International Rectifier |
| Datasheet |
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