BIPOLAR TRANSISTOR. IRG4IBC20UDPBF Datasheet

IRG4IBC20UDPBF Datasheet PDF


Part Number

IRG4IBC20UDPBF

Description

INSULATED GATE BIPOLAR TRANSISTOR

Manufacture

International Rectifier

Total Page 10 Pages
Datasheet
Download IRG4IBC20UDPBF Datasheet



IRG4IBC20UDPBF
PD -94917A
IRG4IBC20UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• 2.5kV, 60s insulation voltage …
• 4.8 mm creapage distance to heatsink
VCES = 600V
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
• Tighter parameter distribution
• Industry standard Isolated TO-220 FullpakTM
G
E
n-channel
VCE(on) typ. = 1.85V
@VGE = 15V, IC = 6.5A
outline
• Lead-Free
Benefits
• Simplified assembly
• Highest efficiency and power density
• HEXFREDTM antiparallel Diode minimizes
switching losses and EMI
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
Visol
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
RMS Isolation Voltage, Terminal to Case…
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
TO-220 FULLPAK
Max.
600
11.4
6.0
52
52
6.5
52
2500
± 20
34
14
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Thermal Resistance
RθJC
RθJC
RθJA
Wt
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Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
–––
–––
2.0 (0.07)
Max.
3.7
5.1
65
–––
Units
°C/W
g (oz)
1
01/28/2010

IRG4IBC20UDPBF
IRG4IBC20UDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltageƒ 600
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage –––
VCE(on)
Collector-to-Emitter Saturation Voltage –––
–––
–––
VGE(th)
VGE(th)/TJ
gfe
ICES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance „
Zero Gate Voltage Collector Current
3.0
–––
1.4
–––
–––
VFM Diode Forward Voltage Drop
–––
–––
IGES Gate-to-Emitter Leakage Current –––
––– ––– V
0.69 ––– V/°C
1.85 2.1
2.27 ––– V
1.87 –––
––– 6.0
-11 ––– mV/°C
4.3 ––– S
––– 250 µA
––– 1700
1.4 1.7 V
1.3 1.6
––– ±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 6.5A
VGE = 15V
IC = 13A
See Fig. 2, 5
IC = 6.5A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 6.5A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 8.0A
See Fig. 13
IC = 8.0A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
2
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
––– 27 41
––– 4.5 6.8
––– 10 16
––– 39 –––
––– 15 –––
––– 93 140
––– 110 170
––– 0.16 –––
––– 0.13 –––
––– 0.29 0.3
––– 38 –––
––– 17 –––
––– 100 –––
––– 220 –––
––– 0.49 –––
––– 7.5 –––
––– 530 –––
––– 39 –––
––– 7.4 –––
––– 37 55
––– 55 90
––– 3.5 5.0
––– 4.5 8.0
––– 65 138
––– 124 360
––– 240 –––
––– 210 –––
IC = 6.5A
nC VCC = 400V
See Fig. 8
VGE = 15V
TJ = 25°C
ns IC = 6.5A, VCC = 480V
VGE = 15V, RG = 50
Energy losses include "tail" and
diode reverse recovery.
mJ See Fig. 9, 10, 11, 18
ns
mJ
nH
pF
ns
A
nC
A/µs
TJ = 150°C, See Fig. 9, 10, 11, 18
IC = 6.5A, VCC = 480V
VGE = 15V, RG = 50
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
VGE = 0V
VCC = 30V
ƒ = 1.0MHz
See Fig. 7
TJ = 25°C See Fig.
TJ = 125°C 14
IF = 8.0A
TJ = 25°C See Fig.
TJ = 125°C 15
VR = 200V
TJ = 25°C See Fig.
TJ = 125°C
16 di/dt 200A/µs
TJ = 25°C See Fig.
TJ = 125°C 17
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