PD -95525A
IRG4PH50SPbF
INSULATED GATE BIPOLAR TRANSISTOR Features
Standard: Optimized for minimum saturation voltage...
PD -95525A
IRG4PH50SPbF
INSULATED GATE BIPOLAR TRANSISTOR Features
Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
Industry standard TO-247AC package Lead-Free
C
G E
n-channel
Standard Speed IGBT
VCES =1200V VCE(on) typ. = 1.47V
@VGE = 15V, IC = 33A
Benefits
Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Parameter
VCES IC@ TC = 25°C IC@ TC = 100°C ICM ILM
VGE
EARV PD @ TC =25° PD @ TC =100° TJ TSTG
Collector-to-Emitter
Voltage Continuous Collector Current Continuous Collector Current
cPulsed Collector Current dClamped Inductive Load Current
Gate-to-Emitter
Voltage
eTransient Gate-to-Emitter
Voltage
Reverse
Voltage Avalanche Energy
Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
Parameter
RθJC RθCS RθJA Wt
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight
www.irf.com
TO-247AC
Max. 1200
57 33 114 114 ± 20 ± 30 270 200 80
-55 to + 150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units V
A
V mJ W
°C
Min.
— — — —
Typ.
— 0.24
...