PDP TRENCH IGBT
PD - 97402A
IRG7S313UPbF
Features
Key Parameters
l Advanced Trench IGBT Technology
VCE min
330
V
...
PDP TRENCH IGBT
PD - 97402A
IRG7S313UPbF
Features
Key Parameters
l Advanced Trench IGBT Technology
VCE min
330
V
l Optimized for Sustain and Energy Recovery
VCE(ON) typ. @ IC = 20A
1.35
V
circuits in PDP applications l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
IRP max @ TC= 25°C TJ max
160
A
150
°C
l High repetitive peak current capability
l Lead Free package
C
G
E
n-channel
G Gate
E C G
D2Pak IRG7S313UPbF
C Collector
E Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
VGE IC @ TC = 25°C IC @ TC = 100°C IRP @ TC = 25°C PD @TC = 25°C PD @TC = 100°C
Gate-to-Emitter
Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V
c Repetitive Peak Current
Power Dissipation Power Dissipation Linear Derating Factor
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
www.DTahtaeSrhmeeat4lUR.ceomsistance
Parameter
RθJC
d Junction-to-Case
Max. ±30 40 20 160 78 31 0.63 -40 to + 150
300
Typ. –––
Max. 1.6
Units V A W
W...