logo

IRGP4263PBF Datasheet, Features, Application

IRGP4263PBF INSULATED GATE BIPOLAR TRANSISTOR

  IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipol.

International Rectifier

IRGP4263PBF - INSULATED GATE BIPOLAR TRANSISTOR

  IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC =.
1.0 · rating-1
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts