IRGS4630DPBF Transistor Datasheet PDF

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor




Part Number IRGS4630DPBF
Description Insulated Gate Bipolar Transistor
Feature IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)P bF Insulated Gate Bipolar Transistor w ith Ultrafast Soft Recovery Diode VCES = 600V IC = 30A, TC =100°C C CC C C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ.
= 1.
65V @ IC = 18A G E n-channel E GC E C G GCE GCE IRGS4630DPbF I RGB4630DPbF IRGP4630DPbF IRGP4630D-EPbF D2Pak TO-220AC TO-247AC TO-247AD Applications
• Appliance Drives
• I nverters
• UPS Features G Gate C C ollector Benefits E Emitter Low VCE(O N) and switching losses High efficienc y in a wide range of applications and s witching Square RBSOA and maximum junc tion temperature 175°C I .
Manufacture International Rectifier
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Part Number IRGS4630DPbF
Description IGBT
Feature VCES = 600V IC = 30A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ.
= 1.
65V @ IC = 18A Applications
• Indus trial Motor Drive
• Inverters
• Welding IR IGBT IRGB4630DPbF IRGI B4630DPbF IRGP4630D(-E)PbF IRGS4630DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C C E C G IRGB4630DPbF TO-220AB C GC E I RGP4630DPbF TO-247AC GCE IRGP4630D-EPb F TO-247AD C G E n-channel G Gate E G C IRGIB4630DPbF TO-220AB Full-Pak C Col lector GC E IRGS4630DPbF D2Pak E Emitt er Features Benefits Low VCE(ON) and switching losses High efficiency in a wide range of applications .
Manufacture Infineon
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