www.DataSheet4U.com
PD - 95813
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB)
Product Summary
Part Num...
www.DataSheet4U.com
PD - 95813
RADIATION HARDENED LOGIC LEVEL POWER
MOSFET SURFACE MOUNT (UB)
Product Summary
Part Number Radiation Level RDS(on) IRHLUB770Z4 100K Rads (Si) 0.55Ω IRHLUB730Z4 300K Rads (Si) 0.55Ω IRHLUB740Z4 600K Rads (Si) 0.55Ω IRHLUB780Z4 1000K Rads (Si) 0.55Ω ID 0.8A 0.8A 0.8A 0.8A
IRHLUB770Z4 60V, N-CHANNEL
c
TECHNOLOGY
UB
International Rectifier’s R7 TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold
voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM,
voltage comparator and operational
amplifiers.
Features:
n n n n n n n n n
5V
CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Complimentary P-Channel Available IRHLUB7970Z4
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC = 25°C ID @ VGS = 4.5V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source
Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche ...