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PD-93881C
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radia...
www.DataSheet4U.com
PD-93881C
RADIATION HARDENED POWER
MOSFET SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level IRHQ57214SE 100K Rads (Si) RDS(on) 1.5Ω ID 1.9A
IRHQ57214SE 250V, QUAD N-CHANNEL
5
TECHNOLOGY
LCC-28
International Rectifier’s R5TM technology provides high performance power
MOSFETs for space applications. These devices have been characterized for Single Event Effects(SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low R DS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of
MOSFETs such as
voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source
Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Pckg. Mounting Surface...