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IRLI630G Datasheet

Part Number IRLI630G
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRLI630G DatasheetIRLI630G Datasheet (PDF)

Previous Datasheet Index Next Data Sheet PD - 9.1236 IRLI630G HEXFET® Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive RDS(ON) Specified at VGS = 4V & 5V Fast Switching Ease of paralleling Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 Fullpak eliminates the ne.

  IRLI630G   IRLI630G






Part Number IRLI630A
Manufacturers International Rectifier
Logo International Rectifier
Description Advanced Power MOSFET
Datasheet IRLI630G DatasheetIRLI630A Datasheet (PDF)

$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.335Ω (Typ.) IRLW/I630A BVDSS = 200 V RDS(on) = 0.4Ω ID = 9 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR www.DataSheet4U.com Characteristic Drain-to-Source V.

  IRLI630G   IRLI630G







Part Number IRLI630A
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description ADVANCED POWER MOSFET
Datasheet IRLI630G DatasheetIRLI630A Datasheet (PDF)

$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.335Ω (Typ.) IRLW/I630A BVDSS = 200 V RDS(on) = 0.4Ω ID = 9 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage C.

  IRLI630G   IRLI630G







Power MOSFET

Previous Datasheet Index Next Data Sheet PD - 9.1236 IRLI630G HEXFET® Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive RDS(ON) Specified at VGS = 4V & 5V Fast Switching Ease of paralleling Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. VDSS = 200V RDS(on) = 0.40Ω ID = 6.2A www.DataSheet4U.com Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 5.0V Continuous Drain Current, VGS @ 5.0V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 6.2 3.9 25 35 0.28 ±10 125 6.2 3.5 5.0 -55 to +.


2007-07-10 : TGA4022    TGA4036    TGA4040    TGA4042-EPU    TGA4043    TGA4046    TGA4501-SCC    TGA4502-SCC    TGA4505    TGA4506   


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