Power MOSFET
IRLI640G, SiHLI640G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC...
Power
MOSFET
IRLI640G, SiHLI640G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
200 VGS = 5.0 V
66 9.0 38 Single
0.18
TO-220 FULLPAK
D
G
GDS
S N-Channel
MOSFET
FEATURES Isolated Package High
Voltage Isolation = 2.5 kVRMS (t = 60 s;
f = 60 Hz) Sink to Lead Creepage Dist. 4.8 mm Logic-Level Gate Drive RDS(on) Specified at VGS = 4V and 5 V Fast Switching Ease of paralleling Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power
MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 10...
