IRS25091SPbF

Features  600V half-bridge driver  Tolerant to negative transient voltages  Gate drive supply range from 10 V to 20 V  Under-voltage lock-out for both channels  3.3 V, 5 V and 15 V input logic compatible  Cross-conduction prevention logic  Matched propagation delay for both channels  High side output in phase with IN input  Internal 530 ns dead-time, and programmable up to 5usec with external resistor.  Lower di/dt gate driver for better noise immunity  DT/SD input turns off both channels  RoHS compliant November 15, 2010 IRS25091SPbF HALF-BRIDGE DRIVER Packages 8-Lead SOIC Product Summary VOFFSET IO+/VOUT ton/off (typ.) Dead Time 600 V max. 120 mA / 250 mA 10 V – 20 V 750 ns & 200 ns 530 ns Description The IRS25091 is a high-voltage, high-speed power MOSFET and IGBT half-bridge driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable a ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V. Typical Connection Applications: *HID Electronic Ballasts IRS25091SPbF Qualification Information† Qualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model IC Latch-Up Tes...