DatasheetsPDF.com

IS37SML01G1

ISSI

1Gb SLC-1b ECC 3.3V SERIAL NAND FLASH MEMORY

IS37SML01G1 IS38SML01G1 1Gb SLC-1b ECC 3.3V SERIAL NAND FLASH MEMORY WITH 104MHZ MULTI I/O SPI INTERFACE DATA SHEET IS3...


ISSI

IS37SML01G1

File Download Download IS37SML01G1 Datasheet


Description
IS37SML01G1 IS38SML01G1 1Gb SLC-1b ECC 3.3V SERIAL NAND FLASH MEMORY WITH 104MHZ MULTI I/O SPI INTERFACE DATA SHEET IS37/38SML01G1 1Gb 3.3V SPI-NAND FLASH MEMORY WITH 104MHZ MULTI I/O SPI INTERFACE with 1b ECC FEATURES  Flexible & Efficient Memory Architecture - Organization: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Efficient Read and Program modes - Support SPI-Mode 0 and SPI-Mode 3 - Bus Width: x1, x2(1), x4 - Command Register Operation - NOP: 4 cycles - OTP Operation - Bad-Block-Protect - Boot Read  Highest performance - Frequency : 104MHz - Internal ECC Implementation: 1-bit ECC - Read Performance - Read from Cell to Register with Internal ECC: 100us - Write Performance - Program time: 400us - typical - Block Erase time: 4ms – typical  Advanced Security Protection - Hardware Data Protection - Program/Erase Lockout during Power Transitions  Industry Standard Pin-out & Packages - M =16-pin SOIC 300mil - L = 8-contact WSON 8x6mm  Low Power with Wide Temp. Ranges - Single 3.3V (2.7V to 3.6V) Voltage Supply - 10 mA Active Read Current - 8 µA Standby Current - Temp Grades: - Industrial: -40°C to +85°C - Extended: -40°C to +105°C - Automotive, A1: -40°C to +85°C - Automotive, A2: -40°C to +105°C Note: 1. X2 Program Operation is not defined.  Reliable CMOS Floating Gate Technology - Internal ECC Requirement: 1bit/512Byte - Endurance: 100K Pr...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)