IS37SML01G1 IS38SML01G1
1Gb SLC-1b ECC
3.3V SERIAL NAND FLASH MEMORY WITH 104MHZ MULTI I/O SPI INTERFACE
DATA SHEET
IS3...
IS37SML01G1 IS38SML01G1
1Gb SLC-1b ECC
3.3V SERIAL NAND FLASH MEMORY WITH 104MHZ MULTI I/O SPI INTERFACE
DATA SHEET
IS37/38SML01G1
1Gb 3.3V SPI-NAND FLASH MEMORY WITH 104MHZ MULTI I/O SPI INTERFACE with 1b ECC
FEATURES
Flexible & Efficient Memory Architecture
- Organization: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell
Efficient Read and Program modes
- Support SPI-Mode 0 and SPI-Mode 3 - Bus Width: x1, x2(1), x4
- Command Register Operation - NOP: 4 cycles - OTP Operation
- Bad-Block-Protect
- Boot Read
Highest performance - Frequency : 104MHz - Internal ECC Implementation: 1-bit ECC - Read Performance
- Read from Cell to Register with Internal ECC: 100us
- Write Performance
- Program time: 400us - typical - Block Erase time: 4ms – typical
Advanced Security Protection
- Hardware Data Protection - Program/Erase Lockout during Power Transitions
Industry Standard Pin-out & Packages - M =16-pin SOIC 300mil - L = 8-contact WSON 8x6mm
Low Power with Wide Temp. Ranges
- Single 3.3V (2.7V to 3.6V)
Voltage Supply
- 10 mA Active Read Current - 8 µA Standby Current - Temp Grades:
- Industrial: -40°C to +85°C
- Extended: -40°C to +105°C - Automotive, A1: -40°C to +85°C - Automotive, A2: -40°C to +105°C
Note: 1. X2 Program Operation is not defined.
Reliable
CMOS Floating Gate
Technology
- Internal ECC Requirement: 1bit/512Byte - Endurance: 100K Pr...