512Mb SDRAM
IS42R32160F, IS45R32160F IS42S32160F, IS45S32160F
16Mx32, 512Mb SDRAM
NOVEMBER 2015
FEATURES
• Clock frequency: 166, ...
Description
IS42R32160F, IS45R32160F IS42S32160F, IS45S32160F
16Mx32, 512Mb SDRAM
NOVEMBER 2015
FEATURES
Clock frequency: 166, 143 MHz
Fully synchronous; all signals referenced to a positive clock edge
Internal bank for hiding row access/precharge
Power supply: Vdd/Vddq = 2.3V-3.6V
IS42/45S32160F - Vdd/Vddq = 3.3V
IS42/45R32160F - Vdd/Vddq = 2.5
LVTTL interface
Programmable burst length – (1, 2, 4, 8, full page)
Programmable burst sequence: Sequential/Interleave
Auto Refresh (CBR)
Self Refresh
8K refresh cycles every 64 ms
Random column address every clock cycle Programmable CAS latency (2, 3 clocks)
Burst read/write and burst read/single write operations capability
Burst termination by burst stop and precharge command
Packages: 90-ball TF-BGA, 86-pin TSOP-ll
Temperature Range: Commercial (0oC to +70oC) Industrial (-40oC to +85oC) Automotive, A1 (-40oC to +85oC) Automotive, A2 (-40oC to +105oC)
device OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed
data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows.
PACKAGE INFORMATION
IS42/45S32160F
IS42/45R32160F 4M x 32 x 4 banks 90-ball TF-BGA
86-pin TSOP-ll
KEY TIMING PARAMETERS
Parameter
Clk Cycle Time CAS Latency = 3 CAS Latency = 2
Clk Frequency CAS Latency = 3 CAS Latency = 2
Access Time from Clock CAS Latency = 3 CAS Latency = 2
-6
-7
6
7
10
10
167 143 100 100
5.4
5.4
6
6
-75E ...
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