IS42S16100C1

IS42S16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM SEPTEMBER 2009 FEATURES Clock frequency: 200, 166, 143 MHz Fully synchronous; all signals referenced to a positive clock edge Two banks can be operated simultaneously and independently Dual internal bank controlled by A11 (bank select) Single 3.3V power supply LVTTL interface Programmable burst length – (1, 2, 4, 8, full page) Programmable burst sequence: Sequential/Interleave 4096 refresh cycles every 64 ms Random column address every clock cycle Programmable CAS latency (2, 3 clocks) Burst read/write and burst read/single write operations capability Burst termination by burst stop and precharge command Byte controlled by LDQM and UDQM Industrial temperature up to 143 MHz Packages 400-mil 50-pin TSOP-II, 60-ball fBGA Lead-free package option DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524...