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IS49NLS96400A Datasheet

Part Number IS49NLS96400A
Manufacturers Integrated Silicon Solution
Logo Integrated Silicon Solution
Description Separate I/O RLDRAM 2 Memory
Datasheet IS49NLS96400A DatasheetIS49NLS96400A Datasheet (PDF)

IS49NLS96400A, IS49NLS18320A 576Mb (64Mbx9, 32Mbx18) Seperate I/O RLDRAM 2 Memory ADVANCED INFORMATION SEPTEMBER 2014 FEATURES  533MHz DDR operation (1.067 Gb/s/pin data rate)  38.4Gb/s peak bandwidth (x18 at 533 MHz clock frequency)  Reduced cycle time (15ns at 533MHz)  32ms refresh (16K refresh for each bank; 128K refresh command must be issued in total each 32ms)  8 internal banks  Non-multiplexed addresses (address multiplexing option available)  SRAM-type interface  Programmable .

  IS49NLS96400A   IS49NLS96400A






Part Number IS49NLS96400
Manufacturers Integrated Silicon Solution
Logo Integrated Silicon Solution
Description Separate I/O RLDRAM 2 Memory
Datasheet IS49NLS96400A DatasheetIS49NLS96400 Datasheet (PDF)

IS49NLS96400,IS49NLS18320 576Mb (x9, x18) Separate I/O RLDRAM 2 Memory    FEATURES  ADVANCED INFORMATION JULY 2012  533MHz DDR operation (1.067 Gb/s/pin data  rate)   38.4 Gb/s peak bandwidth (x18 Separate I/O at  533 MHz clock frequency)   Reduced cycle time (15ns at 533MHz)   32ms refresh (16K refresh for each bank; 128K  refresh command must be issued in total each  32ms)   8 internal banks   Non‐multiplexed addresses (address  multiplexing option available)   SRAM‐type interface  .

  IS49NLS96400A   IS49NLS96400A







Separate I/O RLDRAM 2 Memory

IS49NLS96400A, IS49NLS18320A 576Mb (64Mbx9, 32Mbx18) Seperate I/O RLDRAM 2 Memory ADVANCED INFORMATION SEPTEMBER 2014 FEATURES  533MHz DDR operation (1.067 Gb/s/pin data rate)  38.4Gb/s peak bandwidth (x18 at 533 MHz clock frequency)  Reduced cycle time (15ns at 533MHz)  32ms refresh (16K refresh for each bank; 128K refresh command must be issued in total each 32ms)  8 internal banks  Non-multiplexed addresses (address multiplexing option available)  SRAM-type interface  Programmable READ latency (RL), row cycle time, and burst sequence length  Balanced READ and WRITE latencies in order to optimize data bus utilization  Data mask signals (DM) to mask signal of WRITE data; DM is sampled on both edges of DK.  Differential input clocks (CK, CK#)  Differential input data clocks (DKx, DKx#)  On-die DLL generates CK edge-aligned data and output data clock signals  Data valid signal (QVLD)  HSTL I/O (1.5V or 1.8V nominal)  25-60Ω matched impedance outputs  2.5V VEXT, 1.8V VDD, 1.5V or 1.8V VDDQ I/O  On-die termination (ODT) RTT  IEEE 1149.1 compliant JTAG boundary scan  Operating temperature: Commercial (TC = 0° to +95°C) Industrial (TC = -40°C to +95°C; TA = -40°C to +85°C) OPTIONS  Package:  144-ball FBGA (leaded)  144-ball FBGA (lead-free)  Configuration:  64Mx9  32Mx18  Clock Cycle Timing: Speed Grade -18 -25E -25 -33 Unit tRC 15 15 20 20 ns tCK 1.875 2.5 2.5 3.3 ns Copyright © 2012 Integrated Silicon Solution, Inc. All rights reserved. ISSI.


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