IS61C1024AL

IS61C1024AL IS64C1024AL 128K x 8 HIGH-SPEED CMOS STATIC RAM MAY 2022 FEATURES High-speed access time: 12, 15 ns Low active power: 160 mW (typical) Low standby power: 1000 µW (typical) CMOS standby Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications Fully static operation: no clock or refresh required TTL compatible inputs and outputs Single 5V (±10%) power supply Commercial, industrial, and automotive tempera- ture ranges available Lead free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS61C1024AL/IS64C1024AL is a very high- speed, low power, 131,072-word by 8-bit CMOS static RAMs.They are fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels. Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2.The active LOWWrite Enable (WE) controls both writing and reading of the memory. The IS61C1024AL/IS64C1024AL is available in 32-pin 300-mil SOJ, 32-pin 400-mil SOJ, 32-pin TSOP (Type I, 8x20), and 32-pin sTSOP (Type I, 8 x 13.4) packages. A0-A16 VDD GND I/O0-I/O7 DECODER I/O DATA CIRCUIT 128K x 8 MEMORY ARRAY COLUMN I/O CE1 CE2 OE WE CONTROL CIRCUIT Copyright © 2022 Integrated Silicon Solution, Inc...