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IS61QDB21M36A - ISSI
The Mb and are synchronous, high-performance CMOS static random access memory (SRAM) devices. These SRAMs have separate I/Os, eliminating the need for high-speed bus turnaround. The rising edge of K clock initiates the read/write operation, and all internal operations are self-timed. Refer to the for a description of the basic operations of these SR.
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Related Product
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IS61QDB21M36 |
ISSI |
QUAD (Burst of 2) Synchronous SRAMs |
|
| 2 | IS61QDB21M36C |
ISSI |
36Mb QUAD Synchronous SRAM |
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| 3 | IS61QDB21M18A |
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18Mb QUAD (Burst 2) Synchronous SRAM |
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| 4 | IS61QDB21M18C |
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18Mb QUAD Synchronous SRAM |
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| 5 | IS61QDB22M18 |
ISSI |
QUAD (Burst of 2) Synchronous SRAMs |
|
| 6 | IS61QDB22M18A |
ISSI |
36Mb QUAD (Burst 2) Synchronous SRAM |
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| 7 | IS61QDB22M18C |
ISSI |
36Mb QUAD Synchronous SRAM |
|
| 8 | IS61QDB22M36 |
ISSI |
QUAD (Burst of 2) Synchronous SRAMs |
|
| 9 | IS61QDB22M36A |
ISSI |
72Mb QUAD (Burst 2) Synchronous SRAM |
|
| 10 | IS61QDB24M18 |
ISSI |
QUAD (Burst of 2) Synchronous SRAMs |
|