IS61WV10248ALL

IS61WV10248ALL IS61WV10248BLL IS64WV10248BLL 1M x 8 HIGH-SPEED CMOS STATIC RAM JUNE 2008 FEATURES High-speed access times: 8, 10, 20 ns High-performance, low-power CMOS process Multiple center power and ground pins for greater noise immunity Easy memory expansion with CE and OE options CE power-down Fully static operation: no clock or refresh required TTL compatible inputs and outputs Single power supply – VDD 1.65V to 2.2V (IS61WV10248ALL) speed = 20ns for Vcc = 1.65V to 2.2V – VDD 2.4V to 3.6V (IS61/64WV10248BLL) speed = 10ns for Vcc = 2.4V to 3.6V speed = 8ns for Vcc = 3.3V + 5% Packages available: – 48-ball miniBGA (9mm x 11mm) – 44-pin TSOP (Type II) Industrial and Automotive Temperature Support Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS61WV10248ALL/BLL and IS64WV10248BLL are very high-speed, low power, 1M-word by 8-bit CMOS static RAM. The IS61WV10248ALL/BLL and IS64WV10248BLL are fabricated using ISSI's high- performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. The IS61WV10248ALL/BLL and IS64WV10248BLL operate from a single power supply and all inputs are TTL-compatible. The IS61WV10248ALL/BLL and IS64WV10248BLL are available in 48 ball mini BGA and 44-pin TSOP (Type ...