IS61WV10248ALL IS61WV10248BLL IS64WV10248BLL
1M x 8 HIGH-SPEED CMOS STATIC RAM
JUNE 2008
FEATURES • High-speed access ...
IS61WV10248ALL IS61WV10248BLL IS64WV10248BLL
1M x 8 HIGH-SPEED
CMOS STATIC RAM
JUNE 2008
FEATURES High-speed access times:
8, 10, 20 ns High-performance, low-power
CMOS process Multiple center power and ground pins for
greater noise immunity Easy memory expansion with CE and OE
options CE power-down Fully static operation: no clock or refresh
required TTL compatible inputs and outputs Single power supply
– VDD 1.65V to 2.2V (IS61WV10248ALL) speed = 20ns for Vcc = 1.65V to 2.2V
– VDD 2.4V to 3.6V (IS61/64WV10248BLL) speed = 10ns for Vcc = 2.4V to 3.6V speed = 8ns for Vcc = 3.3V + 5%
Packages available: – 48-ball miniBGA (9mm x 11mm) – 44-pin TSOP (Type II)
Industrial and Automotive Temperature Support Lead-free available
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The ISSI IS61WV10248ALL/BLL and IS64WV10248BLL
are very high-speed, low power, 1M-word by 8-bit
CMOS static RAM. The IS61WV10248ALL/BLL and
IS64WV10248BLL are fabricated using ISSI's high-
performance
CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.
When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with
CMOS input levels.
The IS61WV10248ALL/BLL and IS64WV10248BLL operate from a single power supply and all inputs are TTL-compatible.
The IS61WV10248ALL/BLL and IS64WV10248BLL are available in 48 ball mini BGA and 44-pin TSOP (Type ...