IS61WV25632BLS

IS61WV25632ALL/ALS IS61WV25632BLL/BLS IS64WV25632BLL/BLS 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY MAY 2023 FEATURES High-speed access times: 8, 10, 20 ns High-performance, low-power CMOS process Multiple center power and ground pins for greater noise immunity Easy memory expansion with CE and OE options CE power-down Fully static operation: no clock or refresh required TTL compatible inputs and outputs Single power supply Vdd 1.65V to 2.2V (IS61WV25632Axx) speed = 20ns for Vdd 1.65V to 2.2V Vdd 2.4V to 3.6V (IS61/64WV25632Bxx) speed = 10ns for Vdd 2.4V to 3.6V speed = 8ns for Vdd 3.3V + 5% Packages available: – 90-ball miniBGA (8mm x 13mm) Industrial and Automotive Temperature Support DESCRIPTION The ISSI IS61WV25632Axx/Bxx and IS64WV25632Bxx are high-speed, 8M-bit static RAMs organized as 256K words by 32 bits. It is fabricated using ISSI's high-per- formance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. The device is packaged in the JEDEC standard 90-ball BGA (8mm x 13mm). FUNCTIONAL BLOCK DIAGRAM A0-A17 VDD...