IS62WV102416DBLL

IS62/65WV102416DALL IS62/65WV102416DBLL 1Mx16 LOW VOLTAGE, ULTRA LOW POWER & LOW POWER CMOS STATIC RAM JANUARY 2015 KEY FEATURES  High-speed access time: 45ns, 55ns.  CMOS low power operation – 25 µA (typical) CMOS standby  CMOS for optimum speed and power and TTL compatible interface levels  Single power supply – 1.65V~1.98V VDD (IS62/65WV102416DALL) – 2.2V~3.6V VDD (IS62/65WV102416DBLL)  Fully static operation: no clock or refresh required  Industrial and Automotive temperature support DESCRIPTION The ISSI IS62/65WV102416DALL, IS62/65WV102416DBLL are ULTRA LOW POWER CMOS 16Mbit static RAMs organized as 1M words by 16 bits. It is fabricated using ISSI's highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. The IS62WV102416DALL/ DBLL and IS65WV102416DALL/DBLL are packaged in 48-Pin TSOP (TYPE I). BLOCK DIAGRAM A0-19 A20 DECODER I/O0-7 I/O8-14 I/O15 IO15 CONTROL CIRCUIT , CS2 MEMORY ARRAY (1024KX16) (2048KX8) COLUMN I/O Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and b...