IS62/65WV102416EALL IS62/65WV102416EBLL
1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
FEBRUARY 2016
KEY FEATURES...
IS62/65WV102416EALL IS62/65WV102416EBLL
1Mx16 LOW
VOLTAGE, ULTRA LOW POWER
CMOS STATIC RAM
FEBRUARY 2016
KEY FEATURES
High-speed access time: 45ns, 55ns
CMOS low power operation
– Operating (typical): - 10.8mW (1.8V), 18mW (3.0V)
–
CMOS Standby (typical): - 48 µW (1.8V), 90 µW (3.0V)
TTL compatible interface levels Single power supply
–1.65V—1.98V Vdd (62/65WV102416EALL) – 2.2V--3.6V Vdd (62/65WV102416EBLL) Data control for upper and lower bytes Industrial and Automotive temperature support
BLOCK DIAGRAM
DESCRIPTION
The IS62WV102416EALL/BLL and
IS65WV102416EALL/BLL are Low Power, 16M bit static RAMs organized as 1024K words by 16bits. It is
fabricated using 's high-performance
CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields highperformance and low power consumption devices.
When is HIGH (deselected) or when CS2 is low
(deselected) or when is low , CS2 is high and both
and are HIGH, the device assumes a standby mode at which the power dissipation can be reduced
down with
CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW
Write Enable
controls both writing and reading of
the memory. A data byte allows Upper Byte
and
Lower Byte ( access. The IS62WV102416EALL/BLL and IS65WV102416EALL/BLL are packaged in the JEDEC standard 48-pin BGA (6mm x 8mm).
Copyright © 2016 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves t...