IS62WV102416GALL

IS62WV102416GALL/BLL IS65WV102416GALL/BLL 1024Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEBURARY 2020 KEY FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV102416GALL) – 2.2V-3.6V VDD (IS62/65WV102416GBLL)  Three state outputs  Commercial, Industrial and Automotive temperature support  Lead-free available FUNCTIONAL Block Diagram A0 – A19(20) DECODER VDD GND I/O0 – I/O7 Lower Byte I/O8 – I/O15 Upper Byte I/O DATA CIRCUIT BYTE# CS2 CS1# OE# WE# UB# LB# CONTROL CIRCUIT 1024K x 16 (2048Kx8) MEMORY ARRAY COLUMN I/O DESCRIPTION The ISSI IS62/65WV102416GALL/BLL are high-speed, low power, 16M bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1# is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1# is LOW, CS2 is HIGH and both LB# and UB# are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE#) controls both writing and reading of the memory. A data byte allows Upper Byte (UB#) and Lower Byte (LB#...