IS62WV6416ALL IS62WV6416BLL
64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
FEATURES
• High-speed access time: 45n...
IS62WV6416ALL IS62WV6416BLL
64K x 16 LOW
VOLTAGE, ULTRA LOW POWER
CMOS STATIC RAM
FEATURES
High-speed access time: 45ns, 55ns
CMOS low power operation: 30 mW (typical) operating 15 µW (typical)
CMOS standby TTL compatible interface levels Single power supply 1.7V--2.2V VDD (62WV6416ALL) 2.5V--3.6V VDD (62WV6416BLL) Fully static operation: no clock or refresh required Three state outputs Data control for upper and lower bytes Industrial temperature available 2CS Option Available Lead-free available
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ISSI
JUNE 2005
®
DESCRIPTION
The ISSI IS62WV6416ALL/ IS62WV6416BLL are highspeed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSI's high-performance
CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1 is LOW, CS2 is HIGH and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with
CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS62WV6416ALL and IS62WV6416BLL are packaged in the JEDEC standard 48-pin mini BGA (6mm x 8mm) and 44-Pin TSOP (TYPE II).
FUNCTIONAL BLOCK DIAGRAM
A0-A1...