IS67WV51216DBLL

hgihwol D wol D IS66WV51216DALL IS66/67WV51216DBLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM JULY 2011 FEATURES High-speed access time: – 70ns (IS66WV51216DALL, IS66/67WV51216DBLL) – 55ns (IS66/67WV51216DBLL) CMOS low power operation Single power supply – Vdd = 1.7V-1.95V (IS66WV51216 ALL) – Vdd = 2.5V-3.6V (IS66/67WV51216 BLL) Three state outputs Data control for upper and lower bytes Industrial temperature available Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS66WV51216DALL and IS66/67WV51216DBLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high- performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is (deselected) or when CS1 is , CS2 is and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS66WV51216DALL and IS66/67WV51216DBLL are packaged in the JEDEC standard 48-ball mini BGA (6mm x 8mm) and 44-Pin TSOP (TYPE II). The device is aslo available for die sal...