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ISC5804AT2

Isahaya Electronics Corporation

Transistor

〈Transistor〉 ISC5804AT2 Low frequency Application Silicon NPN Epitaxial Type DESCRIPTION 2SC5804 is a super mini packa...



ISC5804AT2

Isahaya Electronics Corporation


Octopart Stock #: O-632181

Findchips Stock #: 632181-F

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Description
〈Transistor〉 ISC5804AT2 Low frequency Application Silicon NPN Epitaxial Type DESCRIPTION 2SC5804 is a super mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency application. Since it is a super-thin flat lead type package,a high-density mounting are possible. Complementary with 2SC3052. 1.21±0.1 0.2±0.05 1.21±0.1 0.81±0.1 0.2±0.05 OUTLINE DRAWING Unit:mm FEATURE www.DataSheet4U.com ● Super-thin flat lead type package. t=0.45mm ● Excellent linearly of DC forward current gain. ● Low collector to emitter saturation voltage VCE(sat)=0.3V max (@Ic=100mA/IB=10mA) 0.4 ② ③ For hybrid IC,small type machine low frequency voltage amplify application. ※The 0.50±0.03 APPLICATION dimension tolerance is reference value. MAXIMUM RATING(Ta=25℃) SYMBOL JEITA: RATING 50 6 50 150 150 (*) PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature UNIT V V V mA mW ℃ ℃ Terminal Connector ①:Base ②:Emitter ③:Collector Equivalent circuit VCBO VEBO VCEO IC PC Tj Tstg +125 -55~+ 125 Type name hFE Item J ※package mounted on 9mm×19mm×1mm glass-epoxy substrate. A L B C D F E F I H G A~F running No. ELECTRICAL CHARACTERISTICS (Ta=25℃) SYMBOL Collector to Emitter Breakdown voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain C to E saturation voltage PARAMETER V(BR)CEO I...




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