ISCNH060D

isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) <6mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 100 A PD Total Dissipation @TC=25℃ 90 W TJ Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.67 UNIT ℃/W ISCNH060D isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage CONDITIONS VGS= 0; ID= 0.25mA VDS= 10V; ID=0.25mA VGS= 10V; ID= 50A VGS= ±20V;VDS= 0 VDS= 80V; VGS= 0 IS= 50A; VGS= 0 ISCNH060D MIN TYP MAX 100 -- -- 2 -- 4 -- -- 6.0 -- -- ±0.1 -- -- 1 -- -- 1.2 UNIT V V mΩ uA uA V NOTICE： We reserves the rights to make changes of the content herein the da...