isc N-Channel MOSFET Transistor
ISCNH376L
FEATURES ·Drain Current : ID= 72A@ TC=25℃ ·Drain Source Voltage
: VDSS= 500V...
isc N-Channel
MOSFET Transistor
ISCNH376L
FEATURES ·Drain Current : ID= 72A@ TC=25℃ ·Drain Source
Voltage
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 50mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
500
V
VGS
Gate-Source
Voltage-Continuous
±30
V
ID
Drain Current-Continuous
72
A
IDM
Drain Current-Single Pluse
216
A
PD
Total Dissipation @TC=25℃
500
W
TJ
Max. Operating Junction Temperature -55~150
℃
Tstg
Storage Temperature
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 0.25
UNIT ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel
MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown
Voltage
VGS(th) Gate Threshold
Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate
Voltage Drain Current
VSD
Forward On-
Voltage
CONDITIONS VGS= 0; ID= 1.0mA VDS= 10V; ID= 1.0mA VGS= 10V; ID= 36A VGS= ±30V;VDS= 0 VDS= 500V; VGS= 0 IS= 36A; VGS= 0
ISCNH376L
MIN MAX UNIT
500
--
V
3.0
5.0
V
--
50
mΩ
--
±0.1
uA
--
10
uA
--
1.2
V
NOTICE： ISC reserves the rights to make changes...
