isc N-Channel MOSFET Transistor
ISCNL256N
DESCRIPTION ·Drain Current –ID=60A@ TC=25℃ ·Drain Source Voltage-
: VDSS=60V...
isc N-Channel
MOSFET Transistor
ISCNL256N
DESCRIPTION ·Drain Current –ID=60A@ TC=25℃ ·Drain Source
Voltage-
: VDSS=60V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switch Mode Power Supply (SMPS) ·Uninterruptible Power Supply (UPS)
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VDSS
Drain-Source
Voltage (VGS=0)
VGS
Gate-Source
Voltage
ID
Drain Current-continuous@ TC=25℃
IDM
Drain Current-Single Pluse
Ptot
Total Dissipation@TC=25℃
EAS*
Single pulse avalanche energy
IAR
Avalanche current
EAR
Repetitive avalanche energy
Tj
Max. Operating Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
60
V
±20
V
60
A
240
A
150
W
1054
mJ
60
A
15
mJ
150
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
Note: * VDD=25V,L=0.4uH,RG=25Ω，IAR=60A
isc website：www.iscsemi.com
MAX 0.833
UNIT ℃/W
1 isc & iscsemi is registered trademark
isc N-Channel
MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage VGS=0; ID= 10mA
VGS(TH) Gate Threshold
Voltage
VDS=VGS,ID= 1mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=30A
IGSS
Gate Source Leakage Current
VGS= ±20V; VDS= 0
IDSS
Zero Gate
Voltage Drain Current
VDS=60V; VGS= 0
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
...
