isc N-Channel MOSFET Transistor
·FEATURES ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- VDSS: 1500V(Min) ·Stati...
isc N-Channel
MOSFET Transistor
·FEATURES ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source
Voltage- VDSS: 1500V(Min) ·Static Drain-Source On-Resistance RDS(on): <7.5Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·High speed power switching ·Switching regulator, DC-DC converter
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
1500
V
VGS
Gate-Source
Voltage
±30
V
ID
Drain Current-Continuous
4
A
IDM
Drain Current-Single Pulsed
9
A
PD
Total Dissipation @TC=25℃
250
W
Tj
Max. Operating Junction Temperature 150
℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX UNIT
0.5
℃/W
ISH3N150
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isc N-Channel
MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS Drain-Source Breakdown
Voltage VGS=0V; ID =10mA
VGS(th) Gate Threshold
Voltage
VDS=VGS; ID =1mA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID=1.5A
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS=0V
IDSS
Drain-Source Leakage Current
VDS=1500V; VGS= 0V
VSD
Diode forward
voltage
IF=3A; VGS = 0V
ISH3N150
MIN TYP MAX UNIT
1500
V
2
5
V
7.5
Ω
±0.1 μA
1
μA
1.3
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time ...
