65A Enhancement Mode GaN Power Transistors
Datasheet
ISL70020SEH, ISL73020SEH
40V, 65A Enhancement Mode GaN Power Transistors
The ISL70020SEH and ISL73020SEH are...
Description
Datasheet
ISL70020SEH, ISL73020SEH
40V, 65A Enhancement Mode GaN Power Transistors
The ISL70020SEH and ISL73020SEH are 40V N-channel enhancement mode GaN power transistors. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for these devices include commercial aerospace, medical, and nuclear power generation.
The exceptionally high electron mobility and low temperature coefficient of the GaN allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size.
By combining the exceptional performance of the GaN FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for high reliability applications.
Applications
Switching regulation
Motor drives
Relay drives
Inrush protection
Down hole drilling
High reliability industrial
Features
Very low rDS(ON) 3.5mĪ© (typical) Ultra low total gate charge 19nC (typical) ISL70020SEH radiation acceptance testing
ā High dose rate (50-300rad(Si)/s): 100krad(Si) ā Low dose rate (0.01rad(Si)/s): 75krad(Si) ISL73020SEH radiation acceptance testing ā Low dose rate (0.01rad(Si)/s): 75krad(Si) SEE hardness (see t...
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