ISL73033SLHM

Datasheet ISL73033SLHM Radiation Hardened Driver-GaN Power Stage with 100V GaN FET The ISL73033SLHM is a radiation hardened Driver-GaN power stage with a 4.5V gate driver and a 100V, 7.5mΩ enhancement-mode Gallium Nitride (GaN) FET in one package. The device simplifies the PCB layout by integrating a driver plus GaN FET in one package and is designed for isolated topologies and boost type configurations. The driver operates with a supply voltage from 4.5V to 13.2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. The ISL73033SLHM has a 4.5V gate drive voltage (VDRV) generated using an internal regulator that prevents the gate voltage from exceeding the maximum gate-source rating of enhancement-mode GaN FETs. The gate drive voltage also features Undervoltage Lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps the GaN FET in an OFF state whenever VDRV is below the UVLO threshold. The ISL73033SLHM inputs can withstand voltages up to 14.7V regardless of the VDD voltage, allowing the inputs to be connected directly to most PWM controllers. The ISL73033SLHM is offered in an 81 ball 8x8mm Ball Grid Array (BGA) package. Features ▪ Production testing and qualification follow the standard AS6294/1 ▪ 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver ▪ Wide driver bias range of 4.5V to 13.2V ▪ Up to 16.5V logic inputs (regardless of VDD level) Inverting and non-inv...