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ISL9V3040P3-F085C IGBT Datasheet PDFN-Channel IGBT N-Channel IGBT |
| Part Number | ISL9V3040P3-F085C |
|---|---|
| Description | N-Channel IGBT |
| Feature | ECOSPARK) Ignition IGBT
300 mJ, 400 V, N−Channel Ignition IGBT
ISL9V3040x3S T-F085C
Features
• SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Fre e and are RoHS Compliant Applications • Automotive Ignition Coil Driver Cir cuits • High Current Ignition System • Coil on Plug Application MAXIMUM R ATINGS (TJ = 25°C unless otherwise not ed) Symbol Parameter Value Unit BV CER Collector to Emitter Breakdown Volt age (IC = 1 mA) 400 V BVECS Emitter to Collector Voltage − Reverse 24 V Battery Condition (IC = 10 mA) ESCI . |
| Manufacture | ON Semiconductor |
| Datasheet |
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| Part Number | ISL9V3040P3-F085C |
|---|---|
| Description | N-Channel IGBT |
| Feature | ECOSPARK) Ignition IGBT
300 mJ, 400 V, N−Channel Ignition IGBT
ISL9V3040x3S T-F085C
Features
• SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Fre e and are RoHS Compliant Applications • Automotive Ignition Coil Driver Cir cuits • High Current Ignition System • Coil on Plug Application MAXIMUM R ATINGS (TJ = 25°C unless otherwise not ed) Symbol Parameter Value Unit BV CER Collector to Emitter Breakdown Volt age (IC = 1 mA) 400 V BVECS Emitter to Collector Voltage − Reverse 24 V Battery Condition (IC = 10 mA) ESCI . |
| Manufacture | ON Semiconductor |
| Datasheet |
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