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ISL9V3040P3-F085C

ON Semiconductor

N-Channel IGBT

ECOSPARK) Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT ISL9V3040x3ST-F085C Features • SCIS Energy = 300 mJ at...



ISL9V3040P3-F085C

ON Semiconductor


Octopart Stock #: O-1502160

Findchips Stock #: 1502160-F

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Description
ECOSPARK) Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT ISL9V3040x3ST-F085C Features SCIS Energy = 300 mJ at TJ = 25°C Logic Level Gate Drive AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant Applications Automotive Ignition Coil Driver Circuits High Current Ignition System Coil on Plug Application MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA) 400 V BVECS Emitter to Collector Voltage − Reverse 24 V Battery Condition (IC = 10 mA) ESCIS25 ISCIS = 14.2 A, L = 3.0 mHy, RGE = 1 KW, TC = 25°C (Note 1) ESCIS150 ISCIS = 10.6 A, L = 3.0 mHy, RGE = 1 KW, TC = 150°C (Note 2) IC25 Collector Current Continuous at VGE = 4.0 V, TC = 25°C IC110 Collector Current Continuous at VGE = 4.0 V, TC = 110°C VGEM Gate to Emitter Voltage Continuous 300 mJ 170 mJ 21 A 17 A ±10 V PD Power Dissipation Total, TC = 25°C Power Dissipation Derating, TC > 25°C TJ, TSTG Operating Junction and Storage Temperature 150 1 −55 to +175 W W/°C °C TL Lead Temperature for Soldering Purposes (1/8” from case for 10 s) 300 °C TPKG Reflow Soldering according to JESD020C 260 °C ESD HBM−Electrostatic Discharge Voltage 4 kV at 100 pF, 1500 W CDM−Electrostatic Discharge Voltage 2 kV at 1 W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not...




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