IXBF40N160

High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 40N160 IC25 = 28 A VCES = 1600 V VCE(sat) = 6.2 V tf = 40 ns 1 5 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot Symbol V CE(sat) VGE(th) ICES IGES td(on) t r td(off) tf C ies QGon VF RthJC Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = 15/0 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Maximum Ratings 1600 ± 20 V V 28 A 16 A 40 0.8VCES 250 A W Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. I C = 20 A; V GE = 15 V; TVJ = 25°C TVJ = 125°C IC = 2 mA; VGE = VCE VCE = 0.8VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 960 V; IC = 25 A V GE = 15/0 V; R G = 22 Ω 6.2 7.1 V 6.9 V 4 8V 0.4 mA 0.8 mA 500 nA 200 ns 60 ns 300 ns 40 ns V = 25 V; V = 0 V; f = 1 MHz CE GE VCE = 600V; VGE = 15 V; IC = 20 A (reverse conduction); IF = 20A 3300 130 2.5 pF nC V 0.5 K/W Features High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - fast switching for high frequency operation - reverse conduction capability ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline Applications switched mode power supplies DC-DC conver...