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IXBF9N160G Datasheet

Part Number IXBF9N160G
Manufacturers IXYS
Logo IXYS
Description High Voltage BIMOSFET
Datasheet IXBF9N160G DatasheetIXBF9N160G Datasheet (PDF)

High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 9N160 G IC25 = 7 A VCES = 1600 V VCE(sat) = 4.9 V tf = 70 ans 1 5 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot Symbol VCE(sat) V GE(th) ICES IGES t d(on) tr td(off) tf Cies Q Gon V F RthJC Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = 10/0 V; R G = 27 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Maximum Ratings 1600 V ± 20 V 7A 4A 12 0.8·VCES 70 .

  IXBF9N160G   IXBF9N160G






Part Number IXBF9N160
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Power MOSFET
Datasheet IXBF9N160G DatasheetIXBF9N160 Datasheet (PDF)

Advanced Technical Information High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 9N140 IC25 IXBF 9N160 VCES VCE(sat) tf = = = = 7A 1400/1600 V 4.9V 40 ns 1 5 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25°C TC = 90°C VGE = 15/0 V; RG = 100 W; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Conditions TVJ = 25°C to 150°C IXBF 9N140 IXBF 9N160 Maximum Ratings 1400 1600 ± 20 7 4 12 0.8VCES 70 V V V A A A W Features • High V.

  IXBF9N160G   IXBF9N160G







Part Number IXBF9N160
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description High Voltage BIMOSFET
Datasheet IXBF9N160G DatasheetIXBF9N160 Datasheet (PDF)

Advanced Technical Information High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 9N140 IC25 IXBF 9N160 VCES VCE(sat) tf = = = = 7A 1400/1600 V 4.9V 40 ns 1 5 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25°C TC = 90°C VGE = 15/0 V; RG = 100 W; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Conditions TVJ = 25°C to 150°C IXBF 9N140 IXBF 9N160 Maximum Ratings 1400 1600 ± 20 7 4 12 0.8VCES 70 V V V A A A W Features • High V.

  IXBF9N160G   IXBF9N160G







High Voltage BIMOSFET

High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 9N160 G IC25 = 7 A VCES = 1600 V VCE(sat) = 4.9 V tf = 70 ans 1 5 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot Symbol VCE(sat) V GE(th) ICES IGES t d(on) tr td(off) tf Cies Q Gon V F RthJC Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = 10/0 V; R G = 27 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Maximum Ratings 1600 V ± 20 V 7A 4A 12 0.8·VCES 70 A W Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 5 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C I = 0.5 mA; V = V C GE CE VCE = 0.8VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 960 V; IC = 5 A VGE = 10/0 V; RG = 27 Ω 4.9 7 V 5.6 V 3.5 5.5 V 0.1 mA 0.1 mA 500 nA 140 ns 200 ns 120 ns 70 ns VCE = 25 V; VGE = 0 V; f = 1 MHz V = 600V; V = 10 V; I = 5 A CE GE C (reverse conduction); I = 5 A F 550 pF 34 nC 3.6 V 1.75 K/W Features • High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - MOSFET compatible control 10 V turn on gate voltage - fast switching for high frequency operation - reverse conduction capability • ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline Applications •.


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