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MOSFET. IXFP34N65X2M Datasheet |
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X2-Class HiperFETTM
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
IXFP34N65X2M
D
G
S
VDSS =
ID25 =
RDS(on)
650V
34A
100m
OVERMOLDED
TO-220
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
VISOL
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
TC = 25C, Limited by TJM
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
50/60 Hz, 1 Minute
Mounting Torque
Maximum Ratings
650
V
650
V
30
V
40
V
34
A
68
A
10
A
1
J
50
V/ns
40
W
-55 ... +150
C
150
C
-55 ... +150
C
300
°C
260
°C
2500
V~
1.13 / 10
2.5
Nm/lb.in
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250µA
VGS(th)
VDS = VGS, ID = 1.5mA
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 17A, Note 1
Characteristic Values
Min. Typ. Max.
650
V
3.5
5.0 V
100 nA
10 A
1.5 mA
100 m
GDS
Isolated Tab
G = Gate
S = Source
D = Drain
Features
International Standard Package
Plastic Overmolded Tab
High Voltage Package
Low RDS(ON) and QG
Avalanche Rated
2500V~ Electrical Isolation
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
© 2020 IXYS CORPORATION, All Rights Reserved
DS100746C(1/20)
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Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 17A, Note 1
RGi
Gate Input Resistance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
Co(er)
Co(tr)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 17A
R
G
= 10 (External)
VGS = 10V, VDS = 0.5 • VDSS, ID = 17A
Characteristic Values
Min. Typ. Max
12
20
S
0.8
3230
pF
2000
pF
2
pF
130
486
37
60
64
30
56
19
18
0.50
pF
pF
ns
ns
ns
ns
nC
nC
nC
3.10 C/W
C/W
IXFP34N65X2M
OVERMOLDED TO-220
(IXFP...M)
oP
123
Terminals: 1 - Gate
2 - Drain
3 - Source
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
QRM
IRM
IF = 17A, -di/dt = 100A/µs
VR = 100V
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Characteristic Values
Min. Typ. Max
34 A
136 A
1.4 V
164
1.2
14.4
ns
µC
A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734B2 7,157,338B2
6,710,405B2 6,759,692 7,063,975B2
6,710,463 6,771,478B2 7,071,537
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Fig. 1. Output Characteristics @ TJ = 25oC
35
VGS = 10V
9V
30
25
8V
20
7V
15
10
6V
5
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125oC
35
VGS = 10V
30
9V
8V
25
20
7V
15
6V
10
5
5V
4V
0
0
1
2
3
4
5
6
7
8
9
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 17A Value vs.
Drain Current
4.6
4.2
VGS = 10V
3.8
TJ = 125oC
3.4
3.0
2.6
2.2
TJ = 25oC
1.8
1.4
1.0
0.6
0
10
20
30
40
50
60
70
80
ID - Amperes
IXFP34N65X2M
Fig. 2. Extended Output Characteristics @ TJ = 25oC
80
VGS = 10V
70
9V
60
50
8V
40
30
7V
20
10
0
0
6V
5V
5
10
15
20
25
30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 17A Value vs.
Junction Temperature
3.8
3.4
VGS = 10V
3.0
2.6
2.2
I D = 34A
1.8
I D = 17A
1.4
1.0
0.6
0.2
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
1.3
1.2
1.1
BVDSS
1.0
0.9
0.8
VGS(th)
0.7
0.6
-60 -40 -20
0 20 40 60 80 100 120 140 160
TJ - Degrees Centigrade
© 2020 IXYS CORPORATION, All Rights Reserved
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