MOSFET. IXFP34N65X2M Datasheet

IXFP34N65X2M Datasheet PDF


IXFP34N65X2M
X2-Class HiperFETTM
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
IXFP34N65X2M
D
G
S
VDSS =
ID25 =
RDS(on)
650V
34A
100m
OVERMOLDED
TO-220
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
VISOL
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
TC = 25C, Limited by TJM
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
50/60 Hz, 1 Minute
Mounting Torque
Maximum Ratings
650
V
650
V
30
V
40
V
34
A
68
A
10
A
1
J
50
V/ns
40
W
-55 ... +150
C
150
C
-55 ... +150
C
300
°C
260
°C
2500
V~
1.13 / 10
2.5
Nm/lb.in
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250µA
VGS(th)
VDS = VGS, ID = 1.5mA
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 17A, Note 1
Characteristic Values
Min. Typ. Max.
650
V
3.5
5.0 V
100 nA
10 A
1.5 mA
100 m
GDS
Isolated Tab
G = Gate
S = Source
D = Drain
Features
International Standard Package
Plastic Overmolded Tab
High Voltage Package
Low RDS(ON) and QG
Avalanche Rated
2500V~ Electrical Isolation
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
© 2020 IXYS CORPORATION, All Rights Reserved
DS100746C(1/20)


Part IXFP34N65X2M
Description Power MOSFET
Feature IXFP34N65X2M; X2-Class HiperFETTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXFP34N65X2.
Manufacture IXYS
Datasheet
Download IXFP34N65X2M Datasheet


X2-Class HiperFETTM Power MOSFET (Electrically Isolated Tab) IXFP34N65X2M Datasheet
isc N-Channel MOSFET Transistor IXFP34N65X2M ·FEATURES · D IXFP34N65X2M Datasheet





IXFP34N65X2M
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 17A, Note 1
RGi
Gate Input Resistance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
Co(er)
Co(tr)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 17A
R
G
= 10(External)
VGS = 10V, VDS = 0.5 VDSS, ID = 17A
Characteristic Values
Min. Typ. Max
12
20
S
0.8
3230
pF
2000
pF
2
pF
130
486
37
60
64
30
56
19
18
0.50
pF
pF
ns
ns
ns
ns
nC
nC
nC
3.10 C/W
C/W
IXFP34N65X2M
OVERMOLDED TO-220
(IXFP...M)
oP
123
Terminals: 1 - Gate
2 - Drain
3 - Source
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
QRM
IRM
IF = 17A, -di/dt = 100A/µs
VR = 100V
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Characteristic Values
Min. Typ. Max
34 A
136 A
1.4 V
164
1.2
14.4
ns
µC
A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734B2 7,157,338B2
6,710,405B2 6,759,692 7,063,975B2
6,710,463 6,771,478B2 7,071,537



IXFP34N65X2M
Fig. 1. Output Characteristics @ TJ = 25oC
35
VGS = 10V
9V
30
25
8V
20
7V
15
10
6V
5
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125oC
35
VGS = 10V
30
9V
8V
25
20
7V
15
6V
10
5
5V
4V
0
0
1
2
3
4
5
6
7
8
9
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 17A Value vs.
Drain Current
4.6
4.2
VGS = 10V
3.8
TJ = 125oC
3.4
3.0
2.6
2.2
TJ = 25oC
1.8
1.4
1.0
0.6
0
10
20
30
40
50
60
70
80
ID - Amperes
IXFP34N65X2M
Fig. 2. Extended Output Characteristics @ TJ = 25oC
80
VGS = 10V
70
9V
60
50
8V
40
30
7V
20
10
0
0
6V
5V
5
10
15
20
25
30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 17A Value vs.
Junction Temperature
3.8
3.4
VGS = 10V
3.0
2.6
2.2
I D = 34A
1.8
I D = 17A
1.4
1.0
0.6
0.2
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
1.3
1.2
1.1
BVDSS
1.0
0.9
0.8
VGS(th)
0.7
0.6
-60 -40 -20
0 20 40 60 80 100 120 140 160
TJ - Degrees Centigrade
© 2020 IXYS CORPORATION, All Rights Reserved






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