X2-Class HiperFETTM Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
IXFP34N65X2M
D G
S
VDSS =
ID25...
X2-Class HiperFETTM Power
MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
IXFP34N65X2M
D G
S
VDSS =
ID25 = RDS(on)
650V 34A 100m
OVERMOLDED TO-220
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD TJ TJM Tstg TL TSOLD VISOL
Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C, Limited by TJM TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 50/60 Hz, 1 Minute Mounting Torque
Maximum Ratings
650
V
650
V
30
V
40
V
34
A
68
A
10
A
1
J
50
V/ns
40
W
-55 ... +150
C
150
C
-55 ... +150
C
300
°C
260
°C
2500
V~
1.13 / 10 2.5
Nm/lb.in g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250µA
VGS(th)
VDS = VGS, ID = 1.5mA
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 17A, Note 1
Characteristic Values Min. Typ. Max.
650
V
3.5
5.0 V
100 nA
10 A 1.5 mA
100 m
GDS
Isolated Tab
G = Gate S = Source
D = Drain
Features
International Standard Package Plastic Overmolded Tab High
Voltage Package Low RDS(ON) and QG Avalanche Rated 2500V~ Electrical Isolation Low Package Inductance
Advantages
High Power Density Easy to Mount Space Savings
Applications
Switch-Mode and Resonant-Mode Power Supplies
DC-DC Converters ...