HiPerFASTTM IGBT
Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching
Preliminary Data Sheet
IXGH 40N60B2D1 IXGT 40N60B2D1
V CES
IC25 VCE(sat) t
fi typ
= 600 V = 75 A < 1.7 V = 82 ns
Symbol
Test Conditions
VCES VCGR
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ
V GES
VGEM
Continuous Transient
IC25 TC = 25°C (limited by leads)
IC110
TC = 110°C
ICM TC = 25°C, 1 ms
SSOA (RBSOA) PC
V= GE
15
V,
T VJ
=
125°C,
R G
=
10
Ω
Clamped inductive load @ ≤ 600.
IGBT
HiPerFASTTM IGBT
Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching
Preliminary Data Sheet
IXGH 40N60B2D1 IXGT 40N60B2D1
V CES
IC25 VCE(sat) t
fi typ
= 600 V = 75 A < 1.7 V = 82 ns
Symbol
Test Conditions
VCES VCGR
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ
V GES
VGEM
Continuous Transient
IC25 TC = 25°C (limited by leads)
IC110
TC = 110°C
ICM TC = 25°C, 1 ms
SSOA (RBSOA) PC
V= GE
15
V,
T VJ
=
125°C,
R G
=
10
Ω
Clamped inductive load @ ≤ 600 V
TC = 25°C
TJ T
JM
Tstg
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Md Mounting torque (M3)
Weight
TO-247 AD TO-268 SMD
Maximum Ratings
600 V 600 V
±20 V ±30 V
75 A 40 A 200 A
I = 80
CM
A
300 -55 ... +150
150 -55 ... +150
300
W °C °C °C °C
1.13/10 Nm/lb.in.
6g 4g
Symbol
Test Conditions
VGE(th) I
CES
IGES VCE(sat)
IC = 250 µA, VCE = VGE
V =V CE CES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = 30 A, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
3.0 5.0 V
T J
=
25°C
TJ = 150°C
TJ = 25°C
50 µA 1 mA
±100 nA
1.7 V
TO-268 (IXGT)
G E
C (TAB)
TO-247 AD (IXGH)
G C E
C (TAB)
G = Gate, E = Emitter,
C = Collector, TAB = Collector
Features
z Medium frequency IGBT z Square RBSOA z High current handling capability z MOS Gate turn-on
- drive simplicity
Applications
z PFC circuits z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode
power supplies z AC motor speed control z DC s.