IXGN320N60A3

GenX3TM 600V IGBT IXGN320N60A3 Ultra-Low-Vsat PT IGBT for up to 5kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C (Chip Capability) TTeC rm= i1n1a0l CCurrent Limit TC = 25C, 1ms VGE= 15V, TVJ = 125C, RG = 1 Clamped Inductive Load TC = 25C 50/60Hz t = 1min IISOL 1mA t = 1s Mounting Torque Terminal Connection Torque (M4) E Maximum Ratings 600 V 600 V ±20 V ±30 V 320 170 200 1200 A A A A ICM = 320 @0.8 VCES 735 A W -55 ... +150 150 -55 ... +150 C C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 1mA, VGE = 0V VGE(th) IC = 4mA, VCE = VGE ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ±20V TJ = 125C VCE(sat) IC = 100A, VGE = 15V, Note 1 IC = 320A Characteristic Values Min. Typ. Max. 600 V 3.0 5.5 V 150 μA 1.5 mA ±400 nA 1.05 1.30 V 1.46 V VCES = IC110 = VCE(sat)  600V 170A 1.30V SOT-227B, miniBLOC E153432 E G E C G = Gate, C = Collector, E = Emitter Either Emitter Terminal Can Be Used as Main or Kelvin Emitter Features  Optimized for Low Conduction Losses  High Avalanche Capability  Isolation Voltage 3000 V~  International Standard Package Advantages  High Power Density  Low Gate Drive Requirement Applications  Power Inverters  UPS  Motor Drives  SMPS  PFC Circuits  Battery Charge...