IXGN400N30A3

GenX3TM 300V IGBT IXGN400N30A3 Ultra-Low-Vsat PT IGBT for up to 10kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) TC = 110°C Terminal Current Limit TC = 25°C, 1ms VGE= 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load TC = 25°C 50/60Hz t = 1min IISOL ≤ 1mA t = 1s Mounting Torque Terminal Connection Torque (M4) E Maximum Ratings 300 V 300 V ±20 V ±30 V 400 200 200 1200 A A A A ICM = 400 @ 0.8 VCES 735 A V W -55 ... +150 150 -55 ... +150 °C °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 1mA, VGE = 0V VGE(th) IC = 4mA, VCE = VGE ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ±20V TJ = 125°C VCE(sat) IC = 100A, VGE = 15V, Note 1 IC = 400A Characteristic Values Min. Typ. Max. 300 V 3.0 5.0 V 50 μA 2 mA ±400 nA 1.15 V 1.70 V VCES = IC25 = VCE(sat) ≤ 300V 400A 1.15V SOT-227B, miniBLOC E153432 Ec G Ec C G = Gate, C = Collector, E = Emitter cEither Emitter Terminal Can Be Used as Main or Kelvin Emitter Features z Optimized for Low Conduction Losses z High Current Capability z International Standard Package z miniBLOC, with Aluminium Nitride Isolation Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z B...