IXGR50N60B Datasheet





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IXGR50N60B Datasheet - HiPerFAST IGBT ISOPLUS247

IXGR50N60B   IXGR50N60B  

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www.DataSheet4U.com HiPerFASTTM IGBT IS OPLUS247TM VCES IXGR 50N60B IXGR 50N60 BD1 IC25 VCE(sat) (Electrically Isolate d Back Surface) tfi(typ) = 600 V = 75 A = 2.5 V = 85 ns (D1) Symbol VCES VC GR VGES VGEM IC25 IC110 ICM SSOA (RBSOA ) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; R GE = 1 MΩ Continuous Transient TC = 2 5°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clampe d inductive load, L = 100 µH TC = 25° C Maximum Ratings 600 600 ± 20 ± 30 75 45 200 ICM = 100 @ 0.8 VCES 250 -55 ... +150 150 -55 ... +150 300 2500 5 V V V V A A A A W °C °C °C °C V g IS OPLUS 247 E153432 G C E Isolated Ba ckside* G = Gate, E = Emitter C = Collector * Patent

Manufacture Part Number Description

IXYS Corporation

IXGR50N60B

HiPerFAST IGBT ISOPLUS247




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IXGR50N60B datasheet IXGR50N60B component IXGR50N60B integrated circuit IXGR50N60B schematic IXGR50N60B application note XGR50N60B GR50N60B R50N60B IXGR50N60 IXGR50N6 IXGR50N

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