IXGT24N170AH1

High Voltage IGBTs w/Diode Preliminary Technical Information IXGH24N170AH1 IXGT24N170AH1 VCES = IC25 = VCE(sat) ≤ tfi(typ) = 1700V 24A 6.0V 40ns TO-247 (IXGH) Symbol VCES VCGR VGES VGEM IICC2950 ICM SSOA (RBSOA) tSC PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions Maximum Ratings TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 1700 1700 ± 20 ± 30 V V V V TTCC = 25°C = 90°C TC = 25°C, 1ms 24 16 75 VCGlaEm=p1e5dVI,nTdVuJc=tiv1e25L°oCa,dRG = 10Ω 0.I8CM = 50 VCES TJ = 125°C, VCE = 1200V, VGE = 15V, RG = 22Ω 10 TC = 25°C 250 -55 ... +150 150 -55 ... +150 A A A A V μs W °C °C °C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds 300 °C 260 °C Mounting Torque (TO-247) 1.13/10 Nm/lb.in. TO-247 TO-268 6g 4g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = 0.8 VCES, VGE = 0V IGES VCE(sat) VCE = 0V, VGE = ± 20V IC = 16A, VGE = 15V, Note 1 Characteristic Values Min. Typ. Max. 1700 3.0 5.0 V V TJ = 125°C 100 μA 1.5 mA ±100 nA 4.5 6.0 V TJ = 125°C 4.8 V G CE C (TAB) TO-268 (IXGT) GE C (TAB) G = Gate E = Emitter C = Collector TAB = Collector Features z Optimized for Low Conduction and Switching Losses z Anti-Parallel Ultra Fast Diode z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Welding Ma...