High Voltage IGBTs w/Diode
Preliminary Technical Information
IXGH24N170AH1 IXGT24N170AH1
VCES = IC25 = VCE(sat) ≤ tfi...
High
Voltage IGBTs w/Diode
Preliminary Technical Information
IXGH24N170AH1 IXGT24N170AH1
VCES = IC25 = VCE(sat) ≤ tfi(typ) =
1700V 24A 6.0V 40ns
TO-247 (IXGH)
Symbol
VCES VCGR VGES VGEM IICC2950 ICM SSOA (RBSOA)
tSC PC TJ TJM Tstg TL TSOLD Md Weight
Test Conditions
Maximum Ratings
TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous
Transient
1700 1700
± 20 ± 30
V V
V V
TTCC
= 25°C = 90°C
TC = 25°C, 1ms
24 16 75
VCGlaEm=p1e5dVI,nTdVuJc=tiv1e25L°oCa,dRG = 10Ω
0.I8CM
= 50 VCES
TJ = 125°C, VCE = 1200V, VGE = 15V, RG = 22Ω
10
TC = 25°C
250
-55 ... +150
150
-55 ... +150
A A A
A V
μs
W
°C °C °C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds
300 °C 260 °C
Mounting Torque (TO-247)
1.13/10
Nm/lb.in.
TO-247 TO-268
6g 4g
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = 0.8 VCES, VGE = 0V
IGES VCE(sat)
VCE = 0V, VGE = ± 20V IC = 16A, VGE = 15V, Note 1
Characteristic Values
Min.
Typ.
Max.
1700
3.0 5.0
V V
TJ = 125°C
100 μA 1.5 mA ±100 nA 4.5 6.0 V
TJ = 125°C
4.8
V
G CE
C (TAB)
TO-268 (IXGT)
GE
C (TAB)
G = Gate E = Emitter
C = Collector TAB = Collector
Features
z Optimized for Low Conduction and Switching Losses
z Anti-Parallel Ultra Fast Diode z International Standard Packages
Advantages
z High Power Density z Low Gate Drive Requirement
Applications
z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Welding Ma...