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IXGT32N90B2D1

IXYS

IGBT

Advance Technical Information HiPerFASTTM IGBT with Fast Diode B2-Class High Speed IGBTs with Ultrafast Diode IXGH 32N...


IXYS

IXGT32N90B2D1

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Description
Advance Technical Information HiPerFASTTM IGBT with Fast Diode B2-Class High Speed IGBTs with Ultrafast Diode IXGH 32N90B2D1 IXGT 32N90B2D1 V I CES VC25 t CE(sat) fi typ = 900 V = 64 A = 2.7 V = 150 ns Symbol Test Conditions VCES VCGR VGES VGEM TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient IC25 IC110 ICM SSOA (RBSOA) TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load: VCL < 600V PC TC = 25°C TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (TO-247) Maximum Ratings 900 V 900 V ±20 V ±30 V 64 A 32 A 200 A ICM = 64 A 300 -55 ... +150 150 -55 ... +150 300 W °C °C °C °C TO-247 TO-268 1.13/10 Nm/lb.in. 6g 4g Symbol VGE(th) ICES IGES VCE(sat) Test Conditions IC = 250 mA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ± 20 V IC = IC110, VGE = 15 V Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. 3.0 5.0 V TJ = 150°C TJ = 125°C 300 μA 1.5 mA ± 100 nA 2.2 2.7 V 2.1 V TO-247 (IXGH) G CE TO-268 (IXGT) G E C (TAB) C (TAB) G = Gate E = Emitter C = Collector TAB = Collector Features High frequency IGBT High current handling capability MOS Gate turn-on - drive simplicity Applications PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages High power density Ve...




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