IGBT. IXGT35N120B Datasheet

IXGT35N120B Datasheet PDF


Part IXGT35N120B
Description IGBT
Feature Advance Technical Information HiPerFASTTM IGBT IXGH 35N120B IXGT 35N120B VCES = IC2 = VCE(sat) = .
Manufacture IXYS
Datasheet
Download IXGT35N120B Datasheet


Advance Technical Information HiPerFASTTM IGBT IXGH 35N120 IXGT35N120B Datasheet




IXGT35N120B
Advance Technical Information
HiPerFASTTM IGBT
IXGH 35N120B
IXGT 35N120B
VCES =
IC2 =
VCE(sat) =
=tfi(typ)
1200 V
70 A
3.3 V
160 ns
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
1200
1200
V
GES
VGEM
Continuous
Transient
±20
±30
IC25 TC = 25°C
IC90 TC = 90°C
ICM TC = 25°C, 1 ms
70
35
140
SSOA
(RBSOA)
V=
GE
15
V,
T
VJ
=
125°C,
R
G
=
5
W
Clamped inductive load
I = 90
CM
@ 0.8 VCES
P
C
T
C
= 25°C
300
TJ -55 ... +150
T 150
JM
Tstg -55 ... +150
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
300
260
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
°C
M
d
Weight
Mounting torque (M3)
1.13/10 Nm/lb.in.
TO-247 AD
TO-268
6
4
g
g
TO-268
(IXGT)
G
E
TO-247 AD (IXGH)
C (TAB)
G
CE
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
• International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
• Low switching losses, low V
(sat)
• MOS Gate turn-on
- drive simplicity
Symbol
BVCES
VGE(th)
I
CES
IGES
VCE(sat)
Test Conditions
IC = 1 mA, VGE = 0 V
IC = 750 mA, VCE = VGE
V =V
CE CES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
T=
J
25°C
TJ = 125°C
TJ = 125°C
1200
2.5
V
5V
250 mA
5 mA
±100 nA
3.3 V
2.7 V
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
Advantages
• High power density
• Suitable for surface mounting
• Easy to mount with 1 screw,
(isolated mounting screw hole)
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98665 (11/99)
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IXGT35N120B
IXGH 35N120B
IXGT 35N120B
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle £ 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
I = I , V = 15 V
C C90 GE
VCE = 0.8 VCES, RG = Roff = 5 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Inductive load, TJ = 125°C
I = I , V = 15 V
C C90 GE
VCE = 0.8 VCES, RG = Roff = 5 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
30 40
S
4620
260
90
170
28
57
50
27
180
160
3.8
55
31
2.6
300
360
8.0
pF
pF
pF
nC
nC
nC
ns
ns
280 ns
320 ns
7.3 mJ
ns
ns
mJ
ns
ns
mJ
0.42 K/W
(TO-247)
(TO-268)
0.25 K/W
0.3 K/W
TO-247 AD (IXGH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-268AA (D3 PAK)
© 2000 IXYS All rights reserved
Min. Recommended Footprint
Dim. Millimeter
Min. Max.
A 4.9 5.1
A1 2.7 2.9
A2 .02 .25
b 1.15 1.45
b2 1.9 2.1
C .4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
L2 1.00 1.15
L3 0.25 BSC
L4 3.80 4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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